Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration

Abstract

We performed 3D simulations to demonstrate structural effects in sub-20 nm gate-all-around silicon nanowire field effect transistors having asymmetric channel width along the channel direction. We analyzed the differences in the electrical and physical properties for various slopes of the channel width in asymmetric silicon nanowire field effect transistors (SNWFETs) and compared them to symmetrical SNWFETs with uniform channel width. In the same manner, the effects of the individual doping concentration at the source and drain also have been investigated. For various structural conditions, the current and switching characteristics are seriously affected. The differences attributed to the doping levels and geometric conditions are due to the electric field and electron density profile. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745858]