DC Field | Value | Language |
---|---|---|
dc.contributor.author | You, CY | - |
dc.contributor.author | Han, JH | - |
dc.contributor.author | Lee, HW | - |
dc.date.accessioned | 2015-06-25T02:16:30Z | - |
dc.date.available | 2015-06-25T02:16:30Z | - |
dc.date.created | 2014-03-05 | - |
dc.date.issued | 2012-04-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000026765 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10649 | - |
dc.description.abstract | We investigate the spin transfer torque (STT) with multi-orbit tight binding model in the magnetic tunneling junctions (MTJs). So far, most of the theoretical works based on the non-equilibrium Keldysh Green's function method employ a single band model for the simplicity, except a few first principle studies. Even though the single band model captures main physics of STT in MTJ, multi-band calculation reveals new features of the STT that depend on band parameters, such as insulator bandgap, inter-band hopping energy of the ferromagnetic layer. We find that the sign change of perpendicular torkance with bandgap of the insulator layer, and when we allow the inter-band hopping, the bias dependences of perpendicular STT are dramatically changed, while no noticeable changes in parallel STT are found. (C) 2012 American Institute of Physics. [doi:10.1063/1.3671773] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | Journal of Applied Physics | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Multi-orbital tight binding calculations for spin transfer torque in magnetic tunneling junctions | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1063/1.3671773 | - |
dc.author.google | You, CY | en_US |
dc.author.google | Han, JH | en_US |
dc.author.google | Lee, HW | en_US |
dc.relation.volume | 111 | en_US |
dc.relation.issue | 7 | en_US |
dc.relation.startpage | 07C904 | en_US |
dc.contributor.id | 10084423 | en_US |
dc.relation.journal | Journal of Applied Physics | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of Applied Physics, v.111, no.7, pp.7C904 | - |
dc.identifier.wosid | 000303282401094 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 7C904 | - |
dc.citation.title | Journal of Applied Physics | - |
dc.citation.volume | 111 | - |
dc.contributor.affiliatedAuthor | Lee, HW | - |
dc.identifier.scopusid | 2-s2.0-84861736940 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | VOLTAGE-DEPENDENCE | - |
dc.subject.keywordPlus | MGO | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | CAO | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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