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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LEE, KANG SEOP | - |
| dc.contributor.author | SONG, HO JIN | - |
| dc.date.accessioned | 2021-06-01T12:54:45Z | - |
| dc.date.available | 2021-06-01T12:54:45Z | - |
| dc.date.created | 2021-01-29 | - |
| dc.date.issued | 2018-06-13 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/106512 | - |
| dc.description.abstract | A 220-265 GHz × 6 active frequency multiplier MMIC is presented in this paper. The MMIC was fabricated in SO-nm-gate InP HEMT technology. The frequency multiplier consists of a frequency tripier, 120-GHz amplifier, frequency doubler, and 240-GHz amplifier. The frequency multiplier provides more than O-dBm output power in the 220 - 265 GHz region with the peak output power of approximately 5 dBm at around 250 GHz. © 2018 IEEE. | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | 2018 International Microwave Symposium (IMS2018) | - |
| dc.relation.isPartOf | 2018 International Microwave Symposium (IMS2018) | - |
| dc.title | 220 - 265 GHz Active ×6 Frequency Multiplier MMIC with InP HEMT Technology | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 2018 International Microwave Symposium (IMS2018) | - |
| dc.citation.conferenceDate | 2018-06-10 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.title | 2018 International Microwave Symposium (IMS2018) | - |
| dc.contributor.affiliatedAuthor | LEE, KANG SEOP | - |
| dc.contributor.affiliatedAuthor | SONG, HO JIN | - |
| dc.identifier.scopusid | 2-s2.0-85053033434 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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- 송호진SONG, HO JIN
- Dept of Electrical Enginrg