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Cited 10 time in webofscience Cited 12 time in scopus
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dc.contributor.authorBiswas, A-
dc.contributor.authorLi, N-
dc.contributor.authorJung, MH-
dc.contributor.authorLee, YW-
dc.contributor.authorKim, JS-
dc.contributor.authorJeong, YH-
dc.date.accessioned2015-06-25T02:16:33Z-
dc.date.available2015-06-25T02:16:33Z-
dc.date.created2014-03-11-
dc.date.issued2013-05-14-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000029432en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10651-
dc.description.abstractTransparent conductors are essential for many optoelectronic applications, and economically viable replacement for the industry standard transparent conductor, indium tin oxide, is in dire need. Electronic structure calculations are performed to confirm that La doping in a band insulator SrTiO3 provides carriers in the conduction band without generating in-gap states and thus La doped SrTiO3 would retain good optical transparency. To realize the computational results, we synthesize La doped SrTiO3 in thin film form and characterize the films. It is demonstrated that 10% La doped SrTiO3 thin films on SrLaAlO4 (001) substrates are indeed transparent conductors with sheet resistance R-S similar to 60 Omega/square and 80% transmission in the visible wavelength range at room temperature. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAIP-
dc.relation.isPartOfJournal of Applied Physics-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleLa doped SrTiO3 thin films on SrLaAlO4 (001) as transparent conductor-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.4804664-
dc.author.googleBiswas, Aen_US
dc.author.googleLi, Nen_US
dc.author.googleJeong, YHen_US
dc.author.googleKim, JSen_US
dc.author.googleLee, YWen_US
dc.author.googleJung, MHen_US
dc.relation.volume113en_US
dc.relation.issue18en_US
dc.relation.startpage183711en_US
dc.contributor.id10052189en_US
dc.relation.journalJournal of Applied Physicsen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJournal of Applied Physics, v.113, no.18, pp.183711-
dc.identifier.wosid000319294100044-
dc.date.tcdate2019-01-01-
dc.citation.number18-
dc.citation.startPage183711-
dc.citation.titleJournal of Applied Physics-
dc.citation.volume113-
dc.contributor.affiliatedAuthorJeong, YH-
dc.identifier.scopusid2-s2.0-84878026490-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc4-
dc.description.scptc5*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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