Programmable a-InGaZnO gate array with laser-induced forward transfer
SCIE
SCOPUS
- Title
- Programmable a-InGaZnO gate array with laser-induced forward transfer
- Authors
- Jo, Youngmin; Kwon, Jimin; van der Steen, Jan-Laurens; Kronemeijer, Auke Jisk; Jung, Sungjune
- Date Issued
- 2021-03
- Publisher
- IOP PUBLISHING LTD
- Abstract
- Here, we present a pseudo-CMOS NOR gate array based on dual-gate amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) on plastic. We fabricated a 14 x 12 array of NOR gates which was programmed using laser-induced forward transfer printing technology to realize a negative-edge-triggered D flip-flop. Two drive transistors in a conventional NOR gate configuration were replaced by a single independently gate-controlled dual-gate transistor, which enabled us to design and fabricate a gate array with much reduced number of transistors and interconnects. We anticipate that programmable gate arrays based on dual-gate oxide TFTs can be a new route to design and fabrication of digital circuitry that will be essential for emerging applications Internet-of-Things and wearable electronics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/106867
- DOI
- 10.1088/2058-8585/abe653
- ISSN
- 2058-8585
- Article Type
- Article
- Citation
- FLEXIBLE AND PRINTED ELECTRONICS, vol. 6, no. 1, 2021-03
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- There are no files associated with this item.
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