DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyeokjin | - |
dc.contributor.author | Roh, Giyoun | - |
dc.contributor.author | Kang, Bongkoo | - |
dc.date.accessioned | 2021-09-03T04:06:38Z | - |
dc.date.available | 2021-09-03T04:06:38Z | - |
dc.date.created | 2020-07-23 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/106916 | - |
dc.description.abstract | For HfSiON/SiO2 n-type and p-type MOSFETs with a channel length L = 64 nm, the fast relaxation effect of oxide-trapped charges Q(ox) during interrupt for bias temperature instability (BTI) degradation measurement were investigated, and a model that compensated for this effect to predict lifetime t(L) was proposed. Experimental results show that the fast relaxation of Qox during threshold-voltage V-th measurement rapidly saturates within 1 s and is exponentially increasing for gate stress voltage V-g,V-str and exponentially decreasing for measurement duration t(m) but does not affect the BTI degradation mechanism. Using the V-g,V-str and t(m) dependence of Q(ox's) fast relaxation under BTI stress, t(L) prediction model was proposed to compensate the recovery effect by V-th measurement from BTI degradation measured in slow measurement (SM) condition with t(m) > 1 mu s. The proposed model increases the precision of the estimate of t(L) by considering the recovery effect of Qox even in SM. (C) 2020 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.title | Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO2 MOSFETs | - |
dc.type | Article | - |
dc.identifier.doi | 10.35848/1347-4065/ab80a3 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.59 | - |
dc.identifier.wosid | 000546611400004 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 59 | - |
dc.contributor.affiliatedAuthor | Kim, Hyeokjin | - |
dc.contributor.affiliatedAuthor | Roh, Giyoun | - |
dc.contributor.affiliatedAuthor | Kang, Bongkoo | - |
dc.identifier.scopusid | 2-s2.0-85085067463 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SILICATES | - |
dc.subject.keywordPlus | NMOSFETS | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | GENERATION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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