DC Field | Value | Language |
---|---|---|
dc.contributor.author | HEO, YOON UK | - |
dc.contributor.author | Jang, Tae-Young | - |
dc.contributor.author | Kim, Donghyup | - |
dc.contributor.author | Chang, Jun Suk | - |
dc.contributor.author | Nguyen, Manh Cuong | - |
dc.contributor.author | Hasan, Musarrat | - |
dc.contributor.author | Yang, Hoichang | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2021-09-03T04:09:12Z | - |
dc.date.available | 2021-09-03T04:09:12Z | - |
dc.date.created | 2021-07-20 | - |
dc.date.issued | 2012-10-30 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/106937 | - |
dc.description.abstract | This study examined the performance and reliability of HfO2 gate dielectrics in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) capped with Al or Al2O3. The presence of Al capping deteriorated the pMOSFET scalability and channel mobility compared to Al2O3 capping. Al capping caused a higher rate of Al diffusion in the HfO2 dielectric layer, reducing the device performance and oxide thickness scaling. This degradation of the negative bias temperature instability of the Al-incorporated sample was attributed to decay of the interface quality rather than to a decrease in charge trapping in the bulk high-k dielectric. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Elsevier Sequoia | - |
dc.relation.isPartOf | Thin Solid Films | - |
dc.title | Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2012.02.039 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.521, pp.119 - 122 | - |
dc.identifier.wosid | 000309905900028 | - |
dc.citation.endPage | 122 | - |
dc.citation.startPage | 119 | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 521 | - |
dc.contributor.affiliatedAuthor | HEO, YOON UK | - |
dc.identifier.scopusid | 2-s2.0-84867056084 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | DEVICE PERFORMANCE | - |
dc.subject.keywordPlus | GATE TRANSISTORS | - |
dc.subject.keywordPlus | LOGIC TECHNOLOGY | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | STACKS | - |
dc.subject.keywordAuthor | Al | - |
dc.subject.keywordAuthor | Al2O3 metal gate | - |
dc.subject.keywordAuthor | high-k dielectrics | - |
dc.subject.keywordAuthor | NBTI | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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