Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors
SCIE
SCOPUS
- Title
- Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors
- Authors
- HEO, YOON UK; Jang, Tae-Young; Kim, Donghyup; Chang, Jun Suk; Nguyen, Manh Cuong; Hasan, Musarrat; Yang, Hoichang; Jeong, Jae Kyeong; Choi, Rino; Choi, Changhwan
- Date Issued
- 2012-10-30
- Publisher
- Elsevier Sequoia
- Abstract
- This study examined the performance and reliability of HfO2 gate dielectrics in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) capped with Al or Al2O3. The presence of Al capping deteriorated the pMOSFET scalability and channel mobility compared to Al2O3 capping. Al capping caused a higher rate of Al diffusion in the HfO2 dielectric layer, reducing the device performance and oxide thickness scaling. This degradation of the negative bias temperature instability of the Al-incorporated sample was attributed to decay of the interface quality rather than to a decrease in charge trapping in the bulk high-k dielectric. (C) 2012 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/106937
- DOI
- 10.1016/j.tsf.2012.02.039
- ISSN
- 0040-6090
- Article Type
- Article
- Citation
- Thin Solid Films, vol. 521, page. 119 - 122, 2012-10-30
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