Defect-engineered graphene chemical sensors with ultrahigh sensitivity
SCIE
SCOPUS
- Title
- Defect-engineered graphene chemical sensors with ultrahigh sensitivity
- Authors
- Lee, Geonyeop; Yang, Gwangseok; Cho, Ara; HAN, JEONG WOO; Kim, Jihyun
- Date Issued
- 2016-06-07
- Publisher
- Royal Society of Chemistry
- Abstract
- We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.
We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/107576
- DOI
- 10.1039/c5cp04422g
- ISSN
- 1463-9076
- Article Type
- Article
- Citation
- Physical Chemistry Chemical Physics, vol. 18, no. 21, page. 14198 - 14204, 2016-06-07
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