Atomistic computation of local stress and strain distribution around an InAs quantum dot between a GaAs capping layer and a substrate

Abstract

The utilization of self-assembling phenomena is important in nano material processes. For the fabrication of well-aligned multilayered nanodots or nanowires, it is necessary to know the atomistic strain/stress distribution in the capping layer. In the present study, an atomistic computational approach based on an modified embedded-atom method (MEAM) interatomic potential is used to investigate the atomistic strain/stress distribution in a GaAs capping layer over an InAs quantum dot (QD) on a GaAs substrate. The atomic scale local strain/stress around the QD can be well predicted by atomistic simulation and the approach can be used to determine the optimum interlayer distances for well-aligned multilayered QDs.