Atomistic Simulations to Control the Formation of Defects During SiC Single Crystal Growth
- Title
- Atomistic Simulations to Control the Formation of Defects During SiC Single Crystal Growth
- Authors
- 이병주; 강경한
- Date Issued
- 2013-04-26
- Publisher
- 대한금속재료학회
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/108608
- Article Type
- Conference
- Citation
- 2013년도 대한금속재료학회 춘계학술대회, 2013-04-26
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