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Atomistic Simulations to Control the Formation of Defects During SiC Single Crystal Growth

Title
Atomistic Simulations to Control the Formation of Defects During SiC Single Crystal Growth
Authors
이병주강경한
Date Issued
2013-04-26
Publisher
대한금속재료학회
URI
https://oasis.postech.ac.kr/handle/2014.oak/108608
Article Type
Conference
Citation
2013년도 대한금속재료학회 춘계학술대회, 2013-04-26
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이병주LEE, BYEONG JOO
Dept of Materials Science & Enginrg
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