DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Iksoo | - |
dc.contributor.author | Lee, Donghun | - |
dc.contributor.author | Jin, Bo | - |
dc.contributor.author | Kim, Jungsik | - |
dc.contributor.author | LEE, JEONG SOO | - |
dc.date.accessioned | 2022-01-17T05:20:07Z | - |
dc.date.available | 2022-01-17T05:20:07Z | - |
dc.date.created | 2022-01-11 | - |
dc.date.issued | 2022-01-01 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/109165 | - |
dc.description.abstract | <jats:p>Effects of carbon implantation (C-imp) on the contact characteristics of Ti/Ge contact were investigated. The C-imp into Ti/Ge system was developed to reduce severe Fermi-level pinning (FLP) and to improve the thermal stability of Ti/Ge contact. The current density (J)-voltage (V) characteristics showed that the rectifying behavior of Ti/Ge contact into an Ohmic-like behavior with C-imp. The lowering of Schottky barrier height (SBH) indicated that the C-imp could mitigate FLP. In addition, it allows a lower specific contact resistivity (ρc) at the rapid thermal annealing (RTA) temperatures in a range of 450–600 °C. A secondary ion mass spectrometry (SIMS) showed that C-imp facilitates the dopant segregation at the interface. In addition, transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) mapping showed that after RTA at 600 °C, C-imp enhances the diffusion of Ge atoms into Ti layer at the interface of Ti/Ge. Thus, carbon implantation into Ge substrate can effectively reduce FLP and improve contact characteristics.</jats:p> | - |
dc.language | English | - |
dc.publisher | MDPI AG | - |
dc.relation.isPartOf | Micromachines | - |
dc.title | Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/mi13010108 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Micromachines, v.13, no.1, pp.108 | - |
dc.identifier.wosid | 000750724900001 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 108 | - |
dc.citation.title | Micromachines | - |
dc.citation.volume | 13 | - |
dc.contributor.affiliatedAuthor | Park, Iksoo | - |
dc.contributor.affiliatedAuthor | LEE, JEONG SOO | - |
dc.identifier.scopusid | 2-s2.0-85122678655 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SCHOTTKY | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordAuthor | Carbon | - |
dc.subject.keywordAuthor | Fermi-level pinning | - |
dc.subject.keywordAuthor | Germanide | - |
dc.subject.keywordAuthor | Implantation | - |
dc.subject.keywordAuthor | MS contact | - |
dc.subject.keywordAuthor | Titanium | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
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