Organic thin-film transistors with a photo-patternable semiconducting polymer blend

Abstract

A blend of organic semiconductors and photocrosslinkable insulating polymers was photolithographically patterned to yield organic thin-film transistors (OTFTs). The semiconducting polymer of the blend, poly(3-hexylthiophene), was present as a nanofibrillar network and yielded excellent electronic properties. The insulating polymer matrix, poly(vinyl cinnamate), provided the photosensitivity required for photopatterning. The photopatterned TFT devices showed large on/off ratios (>10(5)) and high mobilities (0.015 cm(2) V(-1) s(-1)) comparable to those of devices patterned by conventional means using the same semiconducting materials. This simple method permitted the high-resolution cost-effective patterning of organic semiconductors and may play an important role in the mass-production of organic electronic devices.