DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, W. | - |
dc.contributor.author | Kwon, J. | - |
dc.contributor.author | Takeda, Y. | - |
dc.contributor.author | Sekine, T. | - |
dc.contributor.author | Tokito, S. | - |
dc.contributor.author | Jung, S. | - |
dc.date.accessioned | 2022-02-22T02:50:10Z | - |
dc.date.available | 2022-02-22T02:50:10Z | - |
dc.date.created | 2021-11-28 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 2365-709X | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/109436 | - |
dc.description.abstract | In this study, printed organic nonvolatile memory thin-film transistors (TFTs) with phase-separated tunneling layer is presented. Finely patterned electrodes are fabricated by reverse-offset printing with 15 mu m line width and 10 mu m channel length. Memory devices are configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene). A blended ink, which consisted of a small-molecule p-type organic semiconductor dithieno[2,3-d;2 ',3 '-d ']benzo[1,2-b;4,5-b ']dithiophene and a polystyrene dielectric, is fabricated using air-pulse nozzle printing. The tunneling layer is formed during the active layer printing process with the blended ink by phase separation of small-molecule and polymer. The printed memory TFTs with the phase-separated tunneling layer exhibit significantly improved V-TH shifts (approximate to 3 times), programmed/erased current ratio (>10(3) A A(-1)), switching speed (<100 ms), and estimated data retention (>10 years). This memory device can be applied to wearable electronics, smart Internet-of-Things devices, and neuromorphic computing devices. | - |
dc.language | English | - |
dc.publisher | JOHN WILEY & SONS INC | - |
dc.relation.isPartOf | Advanced Materials Technologies | - |
dc.title | Flexible and Printed Organic Nonvolatile Memory Transistor with Bilayer Polymer Dielectrics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/admt.202100141 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Advanced Materials Technologies, v.6, no.7 | - |
dc.identifier.wosid | 000650225900001 | - |
dc.citation.number | 7 | - |
dc.citation.title | Advanced Materials Technologies | - |
dc.citation.volume | 6 | - |
dc.contributor.affiliatedAuthor | Kim, W. | - |
dc.contributor.affiliatedAuthor | Jung, S. | - |
dc.identifier.scopusid | 2-s2.0-85105754700 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | Separation of small molecules | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Vinylidene fluoride | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Fluorine compounds | - |
dc.subject.keywordPlus | High-k dielectric | - |
dc.subject.keywordPlus | Molecules | - |
dc.subject.keywordPlus | Nonvolatile storage | - |
dc.subject.keywordPlus | Phase separation | - |
dc.subject.keywordPlus | Neuromorphic computing | - |
dc.subject.keywordPlus | Organic nonvolatile memory | - |
dc.subject.keywordPlus | p-Type organic semiconductors | - |
dc.subject.keywordPlus | Patterned electrode | - |
dc.subject.keywordPlus | Reverse offset printings | - |
dc.subject.keywordAuthor | charge trapping | - |
dc.subject.keywordAuthor | nonvolatile memory transistor | - |
dc.subject.keywordAuthor | polymeric electret | - |
dc.subject.keywordAuthor | printed electronics | - |
dc.subject.keywordAuthor | reverse offset printing | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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