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Cited 12 time in webofscience Cited 12 time in scopus
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dc.contributor.authorGiri, A.-
dc.contributor.authorDe, C.-
dc.contributor.authorKumar, M.-
dc.contributor.authorPal, M.-
dc.contributor.authorLee, H.H.-
dc.contributor.authorKim, J.S.-
dc.contributor.authorCheong, S.-W.-
dc.contributor.authorJeong, U.-
dc.date.accessioned2022-02-27T21:40:15Z-
dc.date.available2022-02-27T21:40:15Z-
dc.date.created2021-12-12-
dc.date.issued2021-11-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/109564-
dc.description.abstractFollowing the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr2Ge2Te6, Cr2Si2Te6, Mn3Si2Te6) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr2Ge2Te6 and Cr2Si2Te6, and in-plane direction for Mn3Si2Te6. In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors. ? 2021 Wiley-VCH GmbH.-
dc.languageEnglish-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.relation.isPartOfAdvanced Materials-
dc.titleLarge-Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides-
dc.typeArticle-
dc.identifier.doi10.1002/adma.202103609-
dc.type.rimsART-
dc.identifier.bibliographicCitationAdvanced Materials, v.33, no.45-
dc.identifier.wosid000696902200001-
dc.citation.number45-
dc.citation.titleAdvanced Materials-
dc.citation.volume33-
dc.contributor.affiliatedAuthorGiri, A.-
dc.contributor.affiliatedAuthorKumar, M.-
dc.contributor.affiliatedAuthorPal, M.-
dc.contributor.affiliatedAuthorLee, H.H.-
dc.contributor.affiliatedAuthorKim, J.S.-
dc.contributor.affiliatedAuthorCheong, S.-W.-
dc.contributor.affiliatedAuthorJeong, U.-
dc.identifier.scopusid2-s2.0-85115012565-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordAuthorepitaxial growth-
dc.subject.keywordAuthorepitaxial self-planarization-
dc.subject.keywordAuthorternary metal chalcogenides-
dc.subject.keywordAuthortwo-dimensional ferromagnets-
dc.subject.keywordAuthorvan der Waals magnetic materials-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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