Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-k polymer insulated organic field-effect transistors
SCIE
SCOPUS
- Title
- Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-k polymer insulated organic field-effect transistors
- Authors
- Wentao Wu; Wang, F; Rhee, SW
- Date Issued
- 2012-01
- Publisher
- RSC
- Abstract
- In this study, we report the observation of quasi-ordering in spontaneously associated highly polar surface functional groups (C N) in the high-k polymer dielectric, cyanoethyl pullulan, and its impact on the organic field-effect transistor (OFET) characteristics. We find that the association originates from C N center dot center dot center dot H-C-C N hydrogen bonding as confirmed by XPS, NEXAFS experiments and molecular simulations. The quasi-ordered surface dipoles preferentially induce vertically well-stacked local semiconductor molecular clusters during the initial deposition process, which then promote large-area layer-by-layer growth. By maintaining sufficient quasi-ordering, high transistor performance (mu approximate to 6.5 cm(2) V-1 s(-1), SS approximate to 0.062 V dec(-1)) is obtained under low driving voltages (-3 to -5 V), while breakup of the association at higher baking temperatures leads to a dramatic drop in m by a factor of similar to 10. Our results demonstrate that local quasi-ordering of polymeric surface dipoles, which has a significant effect on the initial semiconductor molecular growth, represents a novel and sensitive factor affecting OFET characteristics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10972
- DOI
- 10.1039/C1JM14398K
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 22, no. 4, page. 1482 - 1488, 2012-01
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.