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Measurement of critical dimension in scanning electron microscope mask images SCIE SCOPUS

Title
Measurement of critical dimension in scanning electron microscope mask images
Authors
Lee, WHan, SHJeong, H
Date Issued
2011-04
Publisher
SPIE-SOC PHOTOPTICAL INSTRUMENTATION ENGINEERS
Abstract
In semiconductor industries, controlling and measuring critical dimensions are two important tools to design masks. However, measuring the dimensions with physical tools becomes more challenging, and the traditional method of measuring is slow and has many processes though it is accurate. This paper suggests a method that accurately measures the critical dimension length in a short time based on the digital image processing. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI:10.1117/1.3574771]
URI
https://oasis.postech.ac.kr/handle/2014.oak/11011
DOI
10.1117/1.3574771
ISSN
1932-5150
Article Type
Article
Citation
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, vol. 10, no. 2, 2011-04
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정홍JEONG, HONG
Dept of Electrical Enginrg
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