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dc.contributor.authorCHULJUN, LEE-
dc.contributor.authorCHOIWOOSEOK-
dc.contributor.authorKWAK, MYOUNG HOON-
dc.contributor.authorKIM, SEYOUNG-
dc.contributor.authorHWANG, HYUNSANG-
dc.date.accessioned2022-03-03T05:43:03Z-
dc.date.available2022-03-03T05:43:03Z-
dc.date.created2022-03-03-
dc.date.issued2021-06-19-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/110230-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.isPartOf2021 Symposium on VLSI Technology-
dc.relation.isPartOf2021 Symposium on VLSI Technology-
dc.titleExcellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2021 Symposium on VLSI Technology-
dc.citation.conferenceDate2021-06-13-
dc.citation.conferencePlaceJA-
dc.citation.title2021 Symposium on VLSI Technology-
dc.contributor.affiliatedAuthorCHULJUN, LEE-
dc.contributor.affiliatedAuthorCHOIWOOSEOK-
dc.contributor.affiliatedAuthorKWAK, MYOUNG HOON-
dc.contributor.affiliatedAuthorKIM, SEYOUNG-
dc.contributor.affiliatedAuthorHWANG, HYUNSANG-
dc.description.journalClass1-
dc.description.journalClass1-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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