Spin–Orbit Torque Switching in an All‐Van der Waals Heterostructure
SCIE
SCOPUS
- Title
- Spin–Orbit Torque Switching in an All‐Van der Waals Heterostructure
- Authors
- Shin, Inseob; Cho, Won Joon; An, Eun‐Su; Park, Sungyu; Jeong, Hyeon‐Woo; Jang, Seong; Baek, Woon Joong; Park, Seong Yong; Yang, Dong‐Hwan; Seo, Jun Ho; Kim, Gi‐Yeop; Ali, Mazhar N.; Choi, Si‐Young; Lee, Hyun‐Woo; Kim, Jun Sung; Kim, Sung Dug; Lee, Gil‐Ho
- Date Issued
- 2022-02
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Abstract
- Current-induced control of magnetization in ferromagnets using spin–orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (ξ) and electrical conductivity (σ), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of ξ ≈ 4.6 and σ ≈ 2.25 × 105 Ω-1 m-1 for WTe2. Moreover, the significantly reduced switching current density of 3.90 × 106 A cm−2 at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/110283
- DOI
- 10.1002/adma.202101730
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- Advanced Materials, vol. 34, no. 8, 2022-02
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- There are no files associated with this item.
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