DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHUNG, CH | - |
dc.contributor.author | RHEE, SW | - |
dc.contributor.author | MOON, SH | - |
dc.date.accessioned | 2015-06-25T02:29:47Z | - |
dc.date.available | 2015-06-25T02:29:47Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 1995-07 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000011096 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11072 | - |
dc.description.abstract | Calculations were made to obtain the equilibrium gas compositions in Si-H-Cl-O and Si-H-F-O systems containing trace amounts of oxygen. From the results, the boundary curves to define the regions for deposition or etching of silicon and silicon oxide were derived and the conditions for silicon epitaxy at low temperatures were proposed. Results of previous experiments demonstrating silicon epitaxy at low temperatures could be anticipated from the trends observed in this study. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | EFFECT OF OXYGEN CONTAMINATION ON THE DEPOSITION AND ETCHING PROPERTIES OF SI-H-CL-O AND SI-H-F-O SYSTEMS | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1149/1.2044310 | - |
dc.author.google | CHUNG, CH | en_US |
dc.author.google | RHEE, SW | en_US |
dc.author.google | MOON, SH | en_US |
dc.relation.volume | 142 | en_US |
dc.relation.issue | 7 | en_US |
dc.relation.startpage | 2405 | en_US |
dc.relation.lastpage | 2410 | en_US |
dc.contributor.id | 10052631 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.142, no.7, pp.2405 - 2410 | - |
dc.identifier.wosid | A1995RJ35500057 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2410 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2405 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 142 | - |
dc.contributor.affiliatedAuthor | RHEE, SW | - |
dc.identifier.scopusid | 2-s2.0-0029346723 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | THERMODYNAMIC EVALUATION | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | SILICON EPITAXY | - |
dc.subject.keywordPlus | EQUILIBRIA | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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