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Effect of the gas-phase reaction in metallorganic chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium SCIE SCOPUS

Title
Effect of the gas-phase reaction in metallorganic chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium
Authors
Yun, JYPark, MYRhee, SW
Date Issued
1998-07
Publisher
ELECTROCHEMICAL SOC INC
Abstract
The effect of the gas-phase reaction on the deposition rate and the properties of TiN films from metallorganic chemical vapor deposition with tetrakis(dimethylamido)titanium was investigated. In situ Fourier transform infrared spectrometry was used to study the gas-phase reaction mechanism, and the deposition of TiN films was carried out in a low pressure, cold-wall chemical vapor deposition reactor at a deposition temperature from 200 to 400 degrees C. It was observed that tetrakis(dimethylamido)titanium in the gas phase was dissociated into dimethylamine above 280 degrees C, and, in this case, the deposition rate was decreased and a Ti-rich film was formed. It was shown that the gas-phase reaction has a significant effect not only on the deposition rate but also on the film properties.
URI
https://oasis.postech.ac.kr/handle/2014.oak/11084
DOI
10.1149/1.1838658
ISSN
0013-4651
Article Type
Article
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 145, no. 7, page. 2453 - 2456, 1998-07
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