DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T02:31:18Z | - |
dc.date.available | 2015-06-25T02:31:18Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-09 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000003584 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11122 | - |
dc.description.abstract | The effect of surface treatment using Cl-2 inductively coupled plasma on ohmic contacts to both n-type and p-type GaN was investigated via synchrotron photoemission spectroscopy. Compared to HCl treatment, the Cl-2 plasma treatment led to a shift of the surface Fermi level by 1.0 eV toward the conduction band maximum for n-type GaN and by 0.8 eV toward the valence band minimum for p-type GaN. N vacancies were produced near the surface by the plasma treatment, playing a role in reducing the surface band bending of n-type GaN, and thereby causing a dramatic decrease in contact resistivity. A significant degradation in the ohmic contact to p-type GaN could be attributed to an n-type layer formed near the surface region of the p-type GaN after the plasma treatment. The n-p junction formed below the surface led to an increased Schottky barrier for the transport of holes. (C) 2003 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effect of Cl-2 plasma treatment on metal contacts to n-type and p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.1595664 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 150 | en_US |
dc.relation.issue | 9 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.150, no.9, pp.G513 - G519 | - |
dc.identifier.wosid | 000184673100054 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | G519 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | G513 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 150 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0043283221 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 17 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TEMPERATURE OHMIC CONTACT | - |
dc.subject.keywordPlus | ETCHING-INDUCED DAMAGE | - |
dc.subject.keywordPlus | SURFACE-TREATMENT | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | INGAN | - |
dc.subject.keywordPlus | ALGAN | - |
dc.subject.keywordPlus | OXIDE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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