DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Luo, H | - |
dc.contributor.author | Xi, YG | - |
dc.contributor.author | Shah, JM | - |
dc.contributor.author | Gessmann, T | - |
dc.contributor.author | Schubert, EF | - |
dc.date.accessioned | 2015-06-25T02:32:22Z | - |
dc.date.available | 2015-06-25T02:32:22Z | - |
dc.date.created | 2009-09-07 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000018797 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11156 | - |
dc.description.abstract | A theoretical and experimental analysis of light extraction in GaInN light-emitting diodes (LEDs) employing diffuse omnidirectional reflectors is presented. The diffuse omnidirectional reflector consists of GaN, a Ni/Au current spreading layer, a SiO2 layer roughened by Ar ion etching, and a Ag layer. Randomly distributed polystyrene spheres are used as an etch mask. The diffusely reflected power is enhanced by two orders of magnitude for a roughened reflector surface compared with a planar surface. The GaInN LEDs with diffuse omnidirectional reflectors show a higher light output (>3.3%) and a lower angular dependence of emission than LEDs with specular reflectors. The enhancement is attributed to reduced trapping of light within the high-index GaN semiconductor. (c) 2005 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Light extraction in GaInN light-emitting diodes using diffuse omnidirectional reflectors | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.2137647 | - |
dc.author.google | Kim, JK | en_US |
dc.author.google | Luo, H | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Gessmann, T | en_US |
dc.author.google | Shah, JM | en_US |
dc.author.google | Xi, YG | en_US |
dc.relation.volume | 153 | en_US |
dc.relation.issue | 2 | en_US |
dc.relation.startpage | G105 | en_US |
dc.relation.lastpage | G107 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.2, pp.G105 - G107 | - |
dc.identifier.wosid | 000234543400056 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | G107 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | G105 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 153 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-30644479719 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 24 | - |
dc.description.scptc | 26 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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