Thesis
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이동국 | - |
| dc.date.accessioned | 2022-03-29T03:21:43Z | - |
| dc.date.available | 2022-03-29T03:21:43Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.other | OAK-2015-08824 | - |
| dc.identifier.uri | http://postech.dcollection.net/common/orgView/200000178596 | ko_KR |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/111629 | - |
| dc.description | Master | - |
| dc.description.abstract | Graphene, which consists of a single atomic layer of carbon atoms, has been attracting great attention as a base material for next-generation electronic devices. It is essential to grow highquality graphene in a large area in order to realize graphene-based electronic devices for mass production. One of the methods is to grow graphene from a single crystalline 4H SiC(0001) substrate, which is known as a method for large-scale growth. In this method we can get graphene in a large area. Also, because of a wide band gap of SiC, graphene doesn`t have to be transferred to other substrates like SiO2. | - |
| dc.language | kor | - |
| dc.publisher | 포항공과대학교 | - |
| dc.title | Graphene Growth and Optimizing Etching Process of SiC Substrates | - |
| dc.type | Thesis | - |
| dc.contributor.college | 일반대학원 물리학과 | - |
| dc.date.degree | 2019- 2 | - |
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