DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, SJ | - |
dc.contributor.author | Kim, JM | - |
dc.contributor.author | Kim, D | - |
dc.contributor.author | Kwon, S | - |
dc.contributor.author | Park, JS | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2015-06-25T02:33:21Z | - |
dc.date.available | 2015-06-25T02:33:21Z | - |
dc.date.created | 2010-04-13 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000020376 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11187 | - |
dc.description.abstract | The electrical properties of atomic layer deposition (ALD) nitrogen-doped ZnO (ZnO:N) thin films were investigated as a function of incorporated nitrogen concentration. The nitrogen concentrations in the films were controlled by using different concentrations of NH4OH solution, which was used as a single source for the reactant and nitrogen doping for ALD ZnO:N. The carrier concentrations in ALD ZnO:N decreased down to 6.13x10(13)/cm(3) using 29% NH4OH solution. Thin film transistors (TFTs) were fabricated using ALD ZnO:N thin films with different N contents as active channel layers. The device properties were significantly changed by the amount of nitrogen incorporation due to the change in the electrical properties of ZnO:N films. Especially, threshold voltages were changed from 20.0 to 3.1 V by adjusting nitrogen doping. Additionally, dc bias stability was enhanced by the increment in nitrogen concentration, producing a robust TFT at high nitrogen incorporation. Finally, a high performance flexible TFT was fabricated using ALD ZnO:N as an active layer on poly(ethylene naphthalate) substrate. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.3269973 | - |
dc.author.google | Lim, SJ | en_US |
dc.author.google | Kim, JM | en_US |
dc.author.google | Kim, H | en_US |
dc.author.google | Park, JS | en_US |
dc.author.google | Kwon, S | en_US |
dc.author.google | Kim, D | en_US |
dc.relation.volume | 157 | en_US |
dc.relation.issue | 2 | en_US |
dc.relation.startpage | H214 | en_US |
dc.relation.lastpage | H218 | en_US |
dc.contributor.id | 10071829 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.2, pp.H214 - H218 | - |
dc.identifier.wosid | 000273222700078 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | H218 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | H214 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 157 | - |
dc.contributor.affiliatedAuthor | Kwon, S | - |
dc.identifier.scopusid | 2-s2.0-73849118524 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 44 | - |
dc.description.scptc | 49 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | carrier density | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | nitrogen | - |
dc.subject.keywordAuthor | semiconductor doping | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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