Buckling of Si and Ge(111)2x1 surfaces
SCIE
SCOPUS
- Title
- Buckling of Si and Ge(111)2x1 surfaces
- Authors
- Nie, S; Feenstra, RM; Lee, JY; Kang, MH
- Date Issued
- 2004-07
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- Voltage-dependent scanning tunneling microscopy is used to determine the buckling of pi-bonded chains on Si and Ge(111)2 x 1 surfaces. Images are acquired over a wide range of voltages, and are compared with theoretical constant-density contours generated from first-principles electronic-structure calculations. The theoretical predictions for <2 (1) over bar(1) over bar > corrugation shifts are quite different for positive and negative buckling; experimental results for Si are found to agree with the former and those for Ge agree with the latter. In addition to an expected shift in <2 (1) over bar(1) over bar > corrugation between small-magnitude positive and negative voltages, a further shift is also seen in both experiment and theory between small and large positive voltages. (C) 2004 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11225
- DOI
- 10.1116/1.1705647
- ISSN
- 0734-2101
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, vol. 22, no. 4, page. 1671 - 1674, 2004-07
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