DC Field | Value | Language |
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dc.contributor.author | SONG, HO JIN | - |
dc.contributor.author | Hamada, Hiroshi | - |
dc.contributor.author | Fujimura, Takuya | - |
dc.contributor.author | Abdo, Ibrahim | - |
dc.contributor.author | Okada, Kenichi | - |
dc.contributor.author | Sugiyama, Hiroki | - |
dc.contributor.author | Matsuzaki, Hideaki | - |
dc.contributor.author | Nosaka, Hideyuki | - |
dc.date.accessioned | 2022-05-04T06:40:37Z | - |
dc.date.available | 2022-05-04T06:40:37Z | - |
dc.date.created | 2022-05-04 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/112554 | - |
dc.description.abstract | This paper presents a 300-GHz transceiver based on 80-nm InP-HEMT technology. To improve the signal-to-noise-and-distortion-ratio (SNDR) characteristics, a high-isolation fundamental mixer is used in which the matching networks are designed for good RF/IF isolation to simultaneously achieve high conversion gain and feasible module packaging. The measured conversion gain of the fabricated mixer module is -15 pm 2\dB, where the LO frequency, IF, and RF are 270, 2-32, and 272-302 GHz. The 300-GHz transceiver consists of the high-isolation mixer, 300-GHz amplifiers, and commercially available frequency multipliers as the LO source. It achieves 100-Gb/s wireless data transmission using 16QAM over a distance of 2.22 m with a 50-dBi antenna. To the best of the authors' knowledge, this is the highest wireless data rate ever achieved using only electronic devices. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 | - |
dc.relation.isPartOf | IEEE MTT-S International Microwave Symposium Digest | - |
dc.title | 300-GHz. 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018, pp.1480 - 1483 | - |
dc.citation.conferenceDate | 2018-06-10 | - |
dc.citation.conferencePlace | US | - |
dc.citation.endPage | 1483 | - |
dc.citation.startPage | 1480 | - |
dc.citation.title | 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 | - |
dc.contributor.affiliatedAuthor | SONG, HO JIN | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
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