Nanocomposite low-k SiCOH films by plasma-enhanced chemical vapor deposition using vinyltrimethylsilane and CO2
SCIE
SCOPUS
- Title
- Nanocomposite low-k SiCOH films by plasma-enhanced chemical vapor deposition using vinyltrimethylsilane and CO2
- Authors
- Jeong, KH; Park, SG; Rhee, SW
- Date Issued
- 2004-11
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- SiCOH films were deposited with plasma-enhanced chemical vapor deposition USin2 vinyltrimethylsilane (VTMS) as a precursor and CO2 as an oxidant. The properties of the films were compared with those films deposited with VTNIS and O-2. As-deposited films and the films annealed at 360 degreesC have been characterized. The growth rate decreased with increasing substrate temperature and increased with increasing CO2,/precursor ratio and plasma power. The dielectric constant was inversely proportional to the relative carbon content and the films deposited with CO2 had a higher carbon content than those deposited with O-2 It was confirmed that CO, was more effective to increase the carbon content. The refractive index of the as-deposited films was about 1.48-1.49 and decreased to 1.46 after annealing. The reduction of the refractive index was due to the lower density and increased porosity of the film. After annealing, the SiCOH films Showed a low dielectric. constant of 1.9 at optimum condition. (C) 2004 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11267
- DOI
- 10.1116/1.1811628
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 6, page. 2799 - 2803, 2004-11
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.