DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, K | - |
dc.date.accessioned | 2015-06-25T02:35:52Z | - |
dc.date.available | 2015-06-25T02:35:52Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2004-07 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000004537 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11269 | - |
dc.description.abstract | ZrxSi1-xO2 films were deposited by using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4). Composition (x) of a 4 nm thick ZrxSi1-xO2 was investigated by Zr 3d, Si 2p, and O 1s x-ray photoelectron spectroscopy depth profiles. The Zr/(Zr+Si) ratio gradationally changed from similar to0.1 at the silicate film surface to similar to0.67 at the ZrxSi1-xO2-Si interface during Ar+ sputtering. An atomically flat interface with no sub-SiO2 interfacial layers was observed. The dielectric constants were approximately 9 for both Zr-silicate films as-deposited and annealed at 500 degreesC in oxygen ambient. When annealed in oxygen ambient, the flat band approached the ideal value in C-V curve. The leakage current density of the Zr-silicate films as-deposited and annealed at 500 degreesC was similar to5 X 10(-4) and similar to3 X 10(-8) A/cm(2), respectively, at a bias of 1.0 V. (C) 2004 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Interfacial properties of ultra thin ZrxSi1-xO2 with compositional gradation grown on Si(100) using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4) | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1116/1.1768524 | - |
dc.author.google | Kim, J | en_US |
dc.author.google | Yong, K | en_US |
dc.relation.volume | 22 | en_US |
dc.relation.issue | 4 | en_US |
dc.relation.startpage | 2105 | en_US |
dc.relation.lastpage | 2109 | en_US |
dc.contributor.id | 10131864 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Conference Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.4, pp.2105 - 2109 | - |
dc.identifier.wosid | 000223925300082 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2109 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2105 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 22 | - |
dc.contributor.affiliatedAuthor | Yong, K | - |
dc.identifier.scopusid | 2-s2.0-4944239613 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.description.scptc | 5 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | ZR | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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