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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | SONG, HO JIN | - |
| dc.contributor.author | Lee, J. W. | - |
| dc.contributor.author | Kang, I. H. | - |
| dc.contributor.author | Kang, S. J. | - |
| dc.contributor.author | Jo, S. J. | - |
| dc.contributor.author | In, S. K. | - |
| dc.contributor.author | Kim, J. H. | - |
| dc.contributor.author | Song, J. I. | - |
| dc.date.accessioned | 2022-05-30T00:21:00Z | - |
| dc.date.available | 2022-05-30T00:21:00Z | - |
| dc.date.created | 2022-05-27 | - |
| dc.date.issued | 2001-12 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/112773 | - |
| dc.description.abstract | We report, for the first time to our knowledge, the characteristics of In | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.relation.isPartOf | International Semiconductor Device Research Symposium, ISDRS 2001 | - |
| dc.relation.isPartOf | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings | - |
| dc.title | In0.5Ga0.5P/In0.22Ga0.78As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | International Semiconductor Device Research Symposium, ISDRS 2001, pp.634 - 637 | - |
| dc.citation.conferenceDate | 2001-12-05 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.endPage | 637 | - |
| dc.citation.startPage | 634 | - |
| dc.citation.title | International Semiconductor Device Research Symposium, ISDRS 2001 | - |
| dc.contributor.affiliatedAuthor | SONG, HO JIN | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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- 송호진SONG, HO JIN
- Dept of Electrical Enginrg