DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, KS | - |
dc.contributor.author | Kim, YS | - |
dc.contributor.author | Lee, KT | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2015-06-25T02:36:22Z | - |
dc.date.available | 2015-06-25T02:36:22Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 2006-07 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000006164 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11285 | - |
dc.description.abstract | After metallization, a 20 nm T gate with a straight foot is not mechanically stable because the support given by the foot is too weak. We have proposed a zigzag gate foot to enhance mechanical support and developed a process using two-step electron beam lithography and zigzag foot shape to fabricate 20 nm T gates for high performance Al0.25Ga0.75As/In0.2Ga0.8As/GaAs modulation-doped field-effect transistors. Two-step lithography reduces electron forward scattering by defining the foot on a thin (40 nm) bottom layer of polymethyl methacrylate at the second step, the T-gate head having been developed at the first step. Adopting a low temperature development technique for the second step reduces the detrimental effect of head exposure on foot definition. With this process, stand-alone 20 nm zigzag T gates have been successfully fabricated on an Al0.25Ga0.75As/In0.2Ga0.8As/GaAs epitaxial wafer using a 20 keV electron beam. With a higher-voltage electron beam, this process can be used to fabricate sub-20-nm T gates. (c) 2006 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Process for 20 nm T gate on Al0.25Ga0.75As/In0.2Ga0.8As/GaAs epilayer using two-step lithography and zigzag foot | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | en_US |
dc.identifier.doi | 10.1116/1.2218871 | - |
dc.author.google | Lee, KS | en_US |
dc.author.google | Kim, YS | en_US |
dc.author.google | Jeong, YH | en_US |
dc.author.google | Lee, KT | en_US |
dc.relation.volume | 24 | en_US |
dc.relation.issue | 4 | en_US |
dc.relation.startpage | 1869 | en_US |
dc.relation.lastpage | 1872 | en_US |
dc.contributor.id | 10106021 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.4, pp.1869 - 1872 | - |
dc.identifier.wosid | 000239890000031 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1872 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1869 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 24 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-33746480334 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | F(T) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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