DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Kyounghwan | - |
dc.contributor.author | Kim, Hyangwoo | - |
dc.contributor.author | Park, Kangwook | - |
dc.contributor.author | Lee, Hyung-Jin | - |
dc.contributor.author | Kong, Byoung Don | - |
dc.contributor.author | Baek, Chang-Ki | - |
dc.date.accessioned | 2022-11-14T09:20:06Z | - |
dc.date.available | 2022-11-14T09:20:06Z | - |
dc.date.created | 2022-11-04 | - |
dc.date.issued | 2022-11 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/114315 | - |
dc.description.abstract | © 2022 The Author(s). Published by IOP Publishing Ltd.A drain-extended fin field-effect transistor (FinFET) with a dual material gate (DMG) and a high-k field plate (FP), named DF-DeFF, is proposed for high-voltage radio frequency (RF) applications. The FP induces the charge variation in the drain extension, which appears as either the extended depletion in the gate-off state or the electron accumulation in the gate-on state. Along with the FP, the DMG forms a step-like potential variation along the channel, which leads to electron acceleration and the screening effect on the drain-to-source voltage (V DS). These effects give significant advantages to the DC characteristics, including breakdown voltage (V BD) and on-resistance (R on), and the RF characteristics, including transconductance (g m) and output-resistance (r o). Compared to the latest high-voltage RF FinFETs, the DF-DeFF shows a drastic improvement in the major performance indicators such as V BD, cut-off frequency (f T), and maximum oscillation frequency (f MAX). These results indicate that DF-DeFF is a FinFET with sufficient competitiveness even in high voltage circumstances. | - |
dc.language | English | - |
dc.publisher | Institute of Physics | - |
dc.relation.isPartOf | Semiconductor Science and Technology | - |
dc.title | A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/1361-6641/ac93ac | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Semiconductor Science and Technology, v.37, no.11 | - |
dc.identifier.wosid | 000863988000001 | - |
dc.citation.number | 11 | - |
dc.citation.title | Semiconductor Science and Technology | - |
dc.citation.volume | 37 | - |
dc.contributor.affiliatedAuthor | Oh, Kyounghwan | - |
dc.contributor.affiliatedAuthor | Kim, Hyangwoo | - |
dc.contributor.affiliatedAuthor | Kong, Byoung Don | - |
dc.contributor.affiliatedAuthor | Baek, Chang-Ki | - |
dc.identifier.scopusid | 2-s2.0-85139546168 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | ANALOG | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordAuthor | dual material gate | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | high-k field plate | - |
dc.subject.keywordAuthor | high-voltage | - |
dc.subject.keywordAuthor | radio frequency (RF) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.