Effects of Self-Assembled Monolayer on Contact Resistance Between IGZO and Electrode for High-Resolution Display

Abstract

© 2022. John Wiley and Sons Inc. AIAA. All rights reserved.We improved the contact properties by inserting a self-assembled monolayer at the interface between a-IGZO and metal electrode. For high-resolution and high-speed displays, the transistor channel length needs to be reduced without short channel effects. In case of Al electrode, it easily diffuses into a-IGZO and forms AlOx at the interface, resulting in a considerable contact resistance increase. In our approach, we successfully suppressed Al diffusion by self-assembled monolayer treatment on a-IGZO thin film. The thickness of AlOx was significantly reduced, which was verified by transmission electron microscopy images. With a proper self-assembled monolayer treatment, the contact resistance was decreased by 36%.