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2T Neuromorphic Device based on oxide semiconductor with High Linearity and Symmetry for High-Precision Training

Title
2T Neuromorphic Device based on oxide semiconductor with High Linearity and Symmetry for High-Precision Training
Authors
CHUNG, YOONYOUNG박성민전길수성수원
Date Issued
2022-10-20
Publisher
ISOCC
URI
https://oasis.postech.ac.kr/handle/2014.oak/115627
Article Type
Conference
Citation
International SoC Design Conference (ISOCC), 2022-10-20
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정윤영CHUNG, YOONYOUNG
Dept of Electrical Enginrg
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