DC Field | Value | Language |
---|---|---|
dc.contributor.author | GILSANG, YOONGILSANG | - |
dc.contributor.author | GO, DONGHYUN | - |
dc.contributor.author | PARK, JOUNG HUN | - |
dc.contributor.author | KIM, DONGHWI | - |
dc.contributor.author | Kim, Jungsik | - |
dc.contributor.author | LEE, JEONG SOO | - |
dc.date.accessioned | 2023-03-02T06:00:34Z | - |
dc.date.available | 2023-03-02T06:00:34Z | - |
dc.date.created | 2023-03-02 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/116161 | - |
dc.description.abstract | The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and sensing technique was used to obtain the distribution of traps in these layers. In the BE-TOX layer, significant traps were generated around 1.3 eV in the nitrogen-doped layer (N1) and increased by 48% in the fresh cell after P/E stress-cycling. The H bonds in the N1 are more likely to break during the stress-cycling and create neutral SiO traps. In the block layer, however, trap generation was negligible after stress-cycling. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Access | - |
dc.title | Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/access.2022.3182397 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Access, v.10, pp.62423 - 62428 | - |
dc.identifier.wosid | 000812551500001 | - |
dc.citation.endPage | 62428 | - |
dc.citation.startPage | 62423 | - |
dc.citation.title | IEEE Access | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | GILSANG, YOONGILSANG | - |
dc.contributor.affiliatedAuthor | GO, DONGHYUN | - |
dc.contributor.affiliatedAuthor | PARK, JOUNG HUN | - |
dc.contributor.affiliatedAuthor | KIM, DONGHWI | - |
dc.contributor.affiliatedAuthor | LEE, JEONG SOO | - |
dc.identifier.scopusid | 2-s2.0-85132742626 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRON TRAP | - |
dc.subject.keywordPlus | OXYNITRIDE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordAuthor | 3D NAND flash memory | - |
dc.subject.keywordAuthor | bandgap-engineered tunneling | - |
dc.subject.keywordAuthor | program | - |
dc.subject.keywordAuthor | erase cycling | - |
dc.subject.keywordAuthor | trap profile | - |
dc.subject.keywordAuthor | TSCIS | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Telecommunications | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Telecommunications | - |
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