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Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering
- Title
- Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering
- Authors
- JANG, HO JUNG; A. Kashir; SEUNYEOL, OH; M. Schuster; R. Gautam; T. Werner; F. Koushan; S. Mueller; HWANG, HYUNSANG; T. Schenk
- Date Issued
- 2022-12-08
- Publisher
- Stanford/Non-volatile Memory Technology Research Initiative
- Article Type
- Conference
- Citation
- The Non-Volatile Memory Technology Symposium, 2022-12-08
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