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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | JANGSEOP, LEE | - |
| dc.contributor.author | KIM, SEONGHUN | - |
| dc.contributor.author | LEE, SANGMIN | - |
| dc.contributor.author | SANGHYUN, BAN | - |
| dc.contributor.author | SEONGJAE, HEO | - |
| dc.contributor.author | Lee, Donghwa | - |
| dc.contributor.author | Mosendz, Oleksandr | - |
| dc.contributor.author | Hwang, Hyunsang | - |
| dc.date.accessioned | 2023-03-03T00:26:17Z | - |
| dc.date.available | 2023-03-03T00:26:17Z | - |
| dc.date.created | 2023-03-02 | - |
| dc.date.issued | 2022-06-15 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/116387 | - |
| dc.description.abstract | To improve the reliability of a nanoscale (d=30 nm) ovonic threshold switching (OTS) selector, we report for the first time the effect of microwave annealing (MWA) on the electrical characteristics of an OTS device. The MWA-treated OTS device shows low initial forming voltage, excellent endurance (> 1011), and reduced threshold voltage (Vth) drift (- 67 %), while maintaining its great switching characteristics (Ioff = 0.8 nA at 1.1 V). Enhanced As-Te bonding probability after MWA, which was confirmed by Raman spectroscopy and density functional theory (DFT) calculations, can explain low forming voltage and improved device reliability. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.relation.isPartOf | 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 | - |
| dc.relation.isPartOf | Digest of Technical Papers - Symposium on VLSI Technology | - |
| dc.title | Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, pp.320 - 321 | - |
| dc.citation.conferenceDate | 2022-06-12 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.endPage | 321 | - |
| dc.citation.startPage | 320 | - |
| dc.citation.title | 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 | - |
| dc.contributor.affiliatedAuthor | JANGSEOP, LEE | - |
| dc.contributor.affiliatedAuthor | KIM, SEONGHUN | - |
| dc.contributor.affiliatedAuthor | LEE, SANGMIN | - |
| dc.contributor.affiliatedAuthor | SANGHYUN, BAN | - |
| dc.contributor.affiliatedAuthor | SEONGJAE, HEO | - |
| dc.contributor.affiliatedAuthor | Lee, Donghwa | - |
| dc.contributor.affiliatedAuthor | Hwang, Hyunsang | - |
| dc.identifier.scopusid | 2-s2.0-85135223431 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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