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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LEE, LEEJONGWON | - |
| dc.contributor.author | NIKAM REVANNATH | - |
| dc.contributor.author | KIM, DONGMIN | - |
| dc.contributor.author | HWANG, HYUNSANG | - |
| dc.date.accessioned | 2023-03-03T00:40:29Z | - |
| dc.date.available | 2023-03-03T00:40:29Z | - |
| dc.date.created | 2023-03-02 | - |
| dc.date.issued | 2022-12-03 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/116410 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | 2022 IEEE International Electron Devices Meeting (IEDM) | - |
| dc.relation.isPartOf | 2022 International Electron Devices Meeting (IEDM) | - |
| dc.title | Highly Scalable (30 nm) and Ultra-low-energy (~5fJ/pulse) Vertical Sensing ECRAM with Ideal Synaptic Characteristics Using Ion-permeable Graphene Electrodes | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 2022 IEEE International Electron Devices Meeting (IEDM) | - |
| dc.citation.conferenceDate | 2022-12-03 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | San Francisco, CA, USA | - |
| dc.citation.title | 2022 IEEE International Electron Devices Meeting (IEDM) | - |
| dc.contributor.affiliatedAuthor | LEE, LEEJONGWON | - |
| dc.contributor.affiliatedAuthor | NIKAM REVANNATH | - |
| dc.contributor.affiliatedAuthor | KIM, DONGMIN | - |
| dc.contributor.affiliatedAuthor | HWANG, HYUNSANG | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg