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Cited 5 time in webofscience Cited 6 time in scopus
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dc.contributor.authorDONGWOOK, LEE-
dc.contributor.authorLEE, LEEJONGWON-
dc.contributor.authorLEE, SANGMIN-
dc.contributor.authorCHULJUN, LEE-
dc.contributor.authorSEONGJAE, HEO-
dc.contributor.authorHwang, Hyunsang-
dc.date.accessioned2023-03-03T06:40:43Z-
dc.date.available2023-03-03T06:40:43Z-
dc.date.created2023-03-02-
dc.date.issued2022-07-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/116659-
dc.description.abstractIn this letter, we propose a compact frequency programmable oscillator with an NbO2-based insulator-metal transition (IMT) device and three-terminal Li-based electro-chemical RAM (Li-ECRAM) for coupled oscillators-based temporal pattern recognition system. Owing to the non-volatility, multilevel characteristics, and linear conductance modulation of Li-ECRAM, our proposed oscillator exhibits a large number of programmable frequencies (45) and high controllability by applying pulses to the Li-ECRAM to attain the target frequency. Furthermore, we demonstrated injection locking phenomenon in our proposed oscillators, which can be utilized for the frequency detection of the injected signal. Finally, we simulated four-coupled oscillators system for the frequency classification of the input temporal signal with multiple frequencies and amplitude noise. These results demonstrate the feasibility of a temporal pattern recognition system composed of our proposed compact frequency-programmable oscillators.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.relation.isPartOfIEEE Electron Device Letters-
dc.titleNonvolatile Frequency-Programmable Oscillator With NbO<sub>2</sub> and Li-Based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal Pattern Recognition System-
dc.typeArticle-
dc.identifier.doi10.1109/led.2022.3172124-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.43, no.7, pp.1041 - 1044-
dc.identifier.wosid000838380800019-
dc.citation.endPage1044-
dc.citation.number7-
dc.citation.startPage1041-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume43-
dc.contributor.affiliatedAuthorDONGWOOK, LEE-
dc.contributor.affiliatedAuthorLEE, LEEJONGWON-
dc.contributor.affiliatedAuthorLEE, SANGMIN-
dc.contributor.affiliatedAuthorCHULJUN, LEE-
dc.contributor.affiliatedAuthorSEONGJAE, HEO-
dc.contributor.affiliatedAuthorHwang, Hyunsang-
dc.identifier.scopusid2-s2.0-85129449131-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordAuthorCoupled oscillators-
dc.subject.keywordAuthorelectro-chemical random access memory-
dc.subject.keywordAuthorinsulator-metal-transition-
dc.subject.keywordAuthoroscillatory neural network-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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