DC Field | Value | Language |
---|---|---|
dc.contributor.author | DONGWOOK, LEE | - |
dc.contributor.author | LEE, LEEJONGWON | - |
dc.contributor.author | LEE, SANGMIN | - |
dc.contributor.author | CHULJUN, LEE | - |
dc.contributor.author | SEONGJAE, HEO | - |
dc.contributor.author | Hwang, Hyunsang | - |
dc.date.accessioned | 2023-03-03T06:40:43Z | - |
dc.date.available | 2023-03-03T06:40:43Z | - |
dc.date.created | 2023-03-02 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/116659 | - |
dc.description.abstract | In this letter, we propose a compact frequency programmable oscillator with an NbO2-based insulator-metal transition (IMT) device and three-terminal Li-based electro-chemical RAM (Li-ECRAM) for coupled oscillators-based temporal pattern recognition system. Owing to the non-volatility, multilevel characteristics, and linear conductance modulation of Li-ECRAM, our proposed oscillator exhibits a large number of programmable frequencies (45) and high controllability by applying pulses to the Li-ECRAM to attain the target frequency. Furthermore, we demonstrated injection locking phenomenon in our proposed oscillators, which can be utilized for the frequency detection of the injected signal. Finally, we simulated four-coupled oscillators system for the frequency classification of the input temporal signal with multiple frequencies and amplitude noise. These results demonstrate the feasibility of a temporal pattern recognition system composed of our proposed compact frequency-programmable oscillators. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.title | Nonvolatile Frequency-Programmable Oscillator With NbO<sub>2</sub> and Li-Based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal Pattern Recognition System | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/led.2022.3172124 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.43, no.7, pp.1041 - 1044 | - |
dc.identifier.wosid | 000838380800019 | - |
dc.citation.endPage | 1044 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1041 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 43 | - |
dc.contributor.affiliatedAuthor | DONGWOOK, LEE | - |
dc.contributor.affiliatedAuthor | LEE, LEEJONGWON | - |
dc.contributor.affiliatedAuthor | LEE, SANGMIN | - |
dc.contributor.affiliatedAuthor | CHULJUN, LEE | - |
dc.contributor.affiliatedAuthor | SEONGJAE, HEO | - |
dc.contributor.affiliatedAuthor | Hwang, Hyunsang | - |
dc.identifier.scopusid | 2-s2.0-85129449131 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Coupled oscillators | - |
dc.subject.keywordAuthor | electro-chemical random access memory | - |
dc.subject.keywordAuthor | insulator-metal-transition | - |
dc.subject.keywordAuthor | oscillatory neural network | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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