DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, M | - |
dc.contributor.author | Lim, H | - |
dc.contributor.author | Hong, M | - |
dc.contributor.author | Choi, HC | - |
dc.date.accessioned | 2015-06-25T02:50:26Z | - |
dc.date.available | 2015-06-25T02:50:26Z | - |
dc.date.created | 2011-09-20 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.other | 2015-OAK-0000024081 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11731 | - |
dc.description.abstract | A direct and metal layer-free growth of flat graphene pads on exfoliated hexagonal boron nitride substrate (h-BN) are demonstrated by atmospheric chemical vapour deposition (CVD) process. Round shape with high flatness graphene pads are grown in high yield (similar to 95%) with a pad thickness of similar to 0.5 nm and homogenous diameter. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Direct growth of graphene pad on exfoliated hexagonal boron nitride surface | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | en_US |
dc.identifier.doi | 10.1039/C1NR10504C | - |
dc.author.google | Son, M | en_US |
dc.author.google | Lim, H | en_US |
dc.author.google | Choi, HC | en_US |
dc.author.google | Hong, M | en_US |
dc.relation.volume | 3 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.startpage | 3089 | en_US |
dc.relation.lastpage | 3093 | en_US |
dc.contributor.id | 10104219 | en_US |
dc.relation.journal | NANOSCALE | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCIE | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.3, no.8, pp.3089 - 3093 | - |
dc.identifier.wosid | 000293521700014 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3093 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 3089 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 3 | - |
dc.contributor.affiliatedAuthor | Choi, HC | - |
dc.identifier.scopusid | 2-s2.0-80051600379 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 53 | - |
dc.description.scptc | 55 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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