Field-effect transistors based on tin halide perovskites

Abstract

This dissertation investigates field-effect transistors (FETs) based on tin halide perovskites as the channel materials. As an emerging class of semiconductors with remarkable properties, metal halide perovskites have enabled unprecedented performance improvements in diverse optoelectronic devices. In comparison, their prospects in high-performance transistors, which are fundamental building blocks for modern electronics, remain to be investigated. This dissertation presents the channel material structures, electrical band characteristics, device physics and FET performance improvements. Based on the increasing understanding on perovskite structure-property and defect-property relationships, this dissertation demonstrates an evolution of tin-based perovskite FETs, including the channel layers evolving from two-dimensional (2D) Ruddlesden-Popper (RP) tin-based perovskites, which are optimized elaborately using different strategies, to the 3D ASnX 3 perovskites, which have not been reported before. Meanwhile, the hole mobilities of the resulting FETs increase from the initial 0.5 cm 2 V −1 s −1 to over 70 cm 2 V −1 s −1 along with other enhanced FET parameters. More importantly, the evolution of the FET characteristics helps me deepen the understanding on the structure-property and defect-property relationships, which are also discussed in detail in this dissertation.