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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, HJ | - |
| dc.contributor.author | Son, M | - |
| dc.contributor.author | Park, C | - |
| dc.contributor.author | Lim, H | - |
| dc.contributor.author | Levendorf, MP | - |
| dc.contributor.author | Tsen, AW | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Choi, HC | - |
| dc.date.accessioned | 2015-06-25T02:50:34Z | - |
| dc.date.available | 2015-06-25T02:50:34Z | - |
| dc.date.created | 2012-06-14 | - |
| dc.date.issued | 2012-01 | - |
| dc.identifier.issn | 2040-3364 | - |
| dc.identifier.other | 2015-OAK-0000025572 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11735 | - |
| dc.description.abstract | Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 degrees C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | ROYAL SOC CHEMISTRY | - |
| dc.relation.isPartOf | NANOSCALE | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication | - |
| dc.type | Article | - |
| dc.contributor.college | 첨단재료과학부 | en_US |
| dc.identifier.doi | 10.1039/C2NR30330B | - |
| dc.author.google | Song, HJ | en_US |
| dc.author.google | Son, M | en_US |
| dc.author.google | Choi, HC | en_US |
| dc.author.google | Park, J | en_US |
| dc.author.google | Tsen, AW | en_US |
| dc.author.google | Levendorf, MP | en_US |
| dc.author.google | Lim, H | en_US |
| dc.author.google | Park, C | en_US |
| dc.relation.volume | 4 | en_US |
| dc.relation.issue | 10 | en_US |
| dc.relation.startpage | 3050 | en_US |
| dc.relation.lastpage | 3054 | en_US |
| dc.contributor.id | 10104219 | en_US |
| dc.relation.journal | NANOSCALE | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | NANOSCALE, v.4, no.10, pp.3050 - 3054 | - |
| dc.identifier.wosid | 000303604000009 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 3054 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 3050 | - |
| dc.citation.title | NANOSCALE | - |
| dc.citation.volume | 4 | - |
| dc.contributor.affiliatedAuthor | Choi, HC | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 64 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
| dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
| dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
| dc.subject.keywordPlus | LARGE-AREA | - |
| dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
| dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
| dc.subject.keywordPlus | HIGH-QUALITY | - |
| dc.subject.keywordPlus | SURFACE | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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- 최희철CHOI, HEE CHEUL
- Dept of Chemistry