Bandgap engineering of CdxZn1-xTe nanowires
SCIE
SCOPUS
- Title
- Bandgap engineering of CdxZn1-xTe nanowires
- Authors
- Davami, K; Pohl, J; Shaygan, M; Kheirabi, N; Faryabi, H; Cuniberti, G; Lee, JS; Meyyappan, M
- Date Issued
- 2013-01
- Publisher
- RSC publishing
- Abstract
- Bandgap engineering of single-crystalline alloy CdxZn1-xTe (0 <= x <= 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk CdxZn1-xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11745
- DOI
- 10.1039/C2NR33284A
- ISSN
- 2040-3364
- Article Type
- Article
- Citation
- Nanoscale, vol. 5, no. 3, page. 932 - 935, 2013-01
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