Solution Processed 2D Transition Metal Dichalcogenides Materials to CMOS Electronics

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have demonstrated exceptional potential as materials for future complementary metal-oxide-semiconductor (CMOS) technology. This is primarily because of their atomic thickness and excellent electrical and mechanical properties. With advancements in fabrication technology, electronic devices based on 2D TMD materials have rapidly progressed from isolated units for scientific experimentation to integrated circuits with practical applications. Among the different production methods, the solution-processing of 2D TMD nanomaterial dispersions offers the distinct advantages of low-temperature processing and cost-effective manufacturing for large-scale flexible and wearable electronics. A wide range of 2D nanoflake inks with versatile electronic properties can be assembled into atomic-thick thin films with dangling-bond-free van der Waals interfaces between adjacent nanoflakes. Furthermore, direct printing techniques can easily integrate multifunctional devices, such as n-type and p-type transistors, into CMOS devices and more complex integrated circuits. Despite these benefits and previous accomplishments, the field of solution-processed CMOS electronics using 2D TMD semiconducting materials is in its early stages of development and requires further research. One of the current challenges is the production of scalable and high-purity 2D semiconductor mono- and few layers with large lateral sizes and narrow thickness distribution. The field-effect mobility of solution-processed 2D TMD transistors remains lower than that of the transistors manufactured using mechanical exfoliation and chemical vapor deposition methods. In particular, limited research has been conducted on solution-processed p-type 2D TMD transistors. As a result, solution-processed CMOS devices using n-type and p-type 2D TMD transistors are scarce. In this Account, we provide an overview of the recent progress in the field of solution-processed CMOS electronics employing 2D TMD materials. First, we introduce the basic liquid exfoliation methods, such as sonication-assisted exfoliation and molecular intercalation methods, that are commonly utilized to prepare 2D TMD dispersions. In addition, we discuss the production of monolayer 2D materials, which serve as the building blocks for fabricating atomic-thick thin films. Subsequently, we review the typical techniques for depositing 2D inks, including spin coating, drop casting, and inkjet printing. Furthermore, we outline the thin-film patterning process for each technique, which is crucial for integrating multifunctional materials in CMOS devices. Subsequently, we focus on the recent advancements in solution-processed 2D TMD transistors. Furthermore, we explore the various factors that can improve the performance of the devices with regard to charge transport and charge traps. Afterward, we highlight notable applications of solution-processed CMOS technology, such as logic circuits and ring oscillators. Finally, we provide an overview of the challenges and opportunities in the development of solution-processed 2D materials and the integration of multifunctional devices for the advancement of CMOS electronics. This Account aims to provide a comprehensive guide for readers, offering both a broad overview and an in-depth insight into solution-processed 2D material-based electronics, covering a wide range of topics from the preparation of 2D TMD ink to device fabrication and CMOS applications. Therefore, this Account is expected to drive further progress and advancements in this field and promote the realization of practical applications. © 2023 Accounts of Materials Research. Co-published by ShanghaiTech University and American Chemical Society. All rights reserved.