Effects of doping and magnetic field on the half-metallic electronic structures of La1-xBaxMnO3

Abstract

To deduce systematic trends in electronic and magnetic properties of colossal magnetoresistance (CMR) manganese oxides, we have investigated electronic structures of La1-xBaxMnO3 with varying doping concentration. Assuming a virtual solid of LbMnO(3), where Lb stands for a virtual atom with a fractional atomic number between La and Ba, we have studied effects of the doping and the magnetic field on the electronic structures of La1-xBaxMnO3. It is found that the La1-xBaxMnO3 system is half metallic in the doping range of x>0.33, and that it becomes half metallic even for x<0.33 by applying the magnetic field. The half-metallic property in the presence of the magnetic field is discussed in relation to the observed CMR effect in doped LaMnO3 systems.