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Cited 24 time in webofscience Cited 25 time in scopus
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dc.contributor.authorCho, JH-
dc.contributor.authorKang, MH-
dc.contributor.authorTerakura, K-
dc.date.accessioned2015-06-25T02:59:27Z-
dc.date.available2015-06-25T02:59:27Z-
dc.date.created2009-03-19-
dc.date.issued1997-06-15-
dc.identifier.issn0163-1829-
dc.identifier.other2015-OAK-0000009821en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12015-
dc.description.abstractWe calculate the Si 2p core-level shifts at the As/Si(001)-(2x1) and Sb/Si(001)-(2x1) surfaces using final-state pseudopotential theory. We find a large difference in the surface core-level shifts originating from the first-layer Si atoms between the two systems, in good agreement with photoemission experiments. We also find the surface components of Si 2p core levels for second- and third-layer Si atoms. Our results for the As/Si(001) system provide an interpretation of several surface components observed in a recent high-resolution core-level spectra.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleSi 2p core-level shifts at the As/Si(001) and Sb/Si(001) surfaces-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.55.15464-
dc.author.googleCho, JHen_US
dc.author.googleKang, MHen_US
dc.author.googleTerakura, Ken_US
dc.relation.volume55en_US
dc.relation.issue23en_US
dc.relation.startpage15464en_US
dc.relation.lastpage15466en_US
dc.contributor.id10105469en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.55, no.23, pp.15464 - 15466-
dc.identifier.wosidA1997XH33500033-
dc.date.tcdate2019-01-01-
dc.citation.endPage15466-
dc.citation.number23-
dc.citation.startPage15464-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume55-
dc.contributor.affiliatedAuthorKang, MH-
dc.identifier.scopusid2-s2.0-0001367442-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc24-
dc.type.docTypeArticle-
dc.subject.keywordPlusSI(100) SURFACE-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusSI(111)-
dc.subject.keywordPlusSTATE-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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