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Cited 12 time in webofscience Cited 12 time in scopus
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dc.contributor.authorKang, JS-
dc.contributor.authorOlson, CG-
dc.contributor.authorInada, Y-
dc.contributor.authorOnuki, Y-
dc.contributor.authorKwon, SK-
dc.contributor.authorMin, BI-
dc.date.accessioned2015-06-25T02:59:46Z-
dc.date.available2015-06-25T02:59:46Z-
dc.date.created2009-02-28-
dc.date.issued1998-08-15-
dc.identifier.issn0163-1829-
dc.identifier.other2015-OAK-0000000388en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12024-
dc.description.abstractThe electronic structure of single crystalline CeNiSn has been investigated using photoemission spectroscopy. The extracted Ce 4f spectrum exhibits three peak structures; the typical Fermi level and 2 eV peaks, and another between them, similar to 0.9 eV below the Fermi level E-F. The near-E-F peak reflects a substantial Ce 4f-Sn sp hybridization, whereas the 0.9 eV peak arises from the Ce 4f-Ni 3d and Ce 5d-Ni 3d hybridization. A Ni 3d satellite feature is observed about 6 eV below the Ni 3d main band, indicating a strong Ni 3d Coulomb correlation in CeNiSn. The high-resolution photoemission study indicates a finite metallic density of states at EF implying a semimetallic ground state. The electronic states near EF are found to have mixed character from the Sn sp, Ce 5d, Ce 4f, and Ni 3d electrons. Constant-initial-state and constant-final-state yield spectra across the 4d-->4f threshold indicate the Ce valence to be close to 3+.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleValence-band photoemission study of single crystalline CeNiSn-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.58.4426-
dc.author.googleKANG, JSen_US
dc.author.googleOLSON, CGen_US
dc.author.googleMIN, BIen_US
dc.author.googleKWON, SKen_US
dc.author.googleONUKI, Yen_US
dc.author.googleINADA, Yen_US
dc.relation.volume58en_US
dc.relation.issue8en_US
dc.relation.startpage4426en_US
dc.relation.lastpage4431en_US
dc.contributor.id10069852en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.58, no.8, pp.4426 - 4431-
dc.identifier.wosid000075772500041-
dc.date.tcdate2019-01-01-
dc.citation.endPage4431-
dc.citation.number8-
dc.citation.startPage4426-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume58-
dc.contributor.affiliatedAuthorMin, BI-
dc.identifier.scopusid2-s2.0-0001671612-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc9-
dc.type.docTypeArticle-
dc.subject.keywordPlusKONDO SEMICONDUCTOR CENISN-
dc.subject.keywordPlusANTIFERROMAGNETIC CORRELATIONS-
dc.subject.keywordPlusRESONANT PHOTOEMISSION-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusNEUTRON-SCATTERING-
dc.subject.keywordPlusHEAVY FERMIONS-
dc.subject.keywordPlusGAP FORMATION-
dc.subject.keywordPlusENERGY-GAP-
dc.subject.keywordPlusSPECTRA-
dc.subject.keywordPlusHYBRIDIZATION-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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