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Cited 7 time in webofscience Cited 6 time in scopus
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dc.contributor.authorLee Chan-Ho-
dc.contributor.authorPark Hyo-Jin-
dc.contributor.authorCho Joo-Mi-
dc.contributor.authorChoi Hyeon-Ji-
dc.contributor.authorPark Su-Min-
dc.contributor.authorBaik Esun-
dc.contributor.authorOh Young-Ju-
dc.contributor.authorAhn Ho-Chan-
dc.contributor.authorLee Chan-Kyu-
dc.contributor.authorShin Jeeyoung-
dc.contributor.authorShin Se-Un-
dc.contributor.authorHong Sung-Wan-
dc.date.accessioned2024-02-19T06:00:15Z-
dc.date.available2024-02-19T06:00:15Z-
dc.date.created2024-02-16-
dc.date.issued2022-09-
dc.identifier.issn0885-8993-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/120274-
dc.description.abstractThis letter proposes an input-independent loop type-III buck converter (ILT3C) enhancing the security of edge devices. Compared to a conventional type-III buck converter, the ILT3C maximally improves power-supply rejection ratio as much as 34.1 dB to be robust against power injection attack. It also reduces the peak of electromagnetic interference as much as 35.8 dB mu V to enhance the security from power side-channel attack. Furthermore, the external components such as an inductor and a capacitor of the converter should be integrated into a package to minimize its exposure to unknown hacking risks. Thus, the proposed converter operates with a high switching frequency (f(sw)) of 20 MHz and it can reduce the size of the external components enough to be placed in the package. The prototype converter was implemented in a 0.18-mu m CMOS process. This ILT3C achieves the maximum efficiency of 90.7% and occupies an active area of 0.195 mm(2).-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.relation.isPartOfIEEE Transactions on Power Electronics-
dc.titleAn Input-Independent Loop Type-III Buck Converter With PSRR Improvement and EMI Suppression for Enhancing the Security of Edge Devices-
dc.typeArticle-
dc.identifier.doi10.1109/TPEL.2022.3160273-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE Transactions on Power Electronics, v.37, no.9, pp.10070 - 10074-
dc.identifier.wosid000800282600006-
dc.citation.endPage10074-
dc.citation.number9-
dc.citation.startPage10070-
dc.citation.titleIEEE Transactions on Power Electronics-
dc.citation.volume37-
dc.contributor.affiliatedAuthorShin Se-Un-
dc.identifier.scopusid2-s2.0-85126727440-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-

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신세운SHIN, SE UN
Dept of Electrical Enginrg
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