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Cited 21 time in webofscience Cited 19 time in scopus
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dc.contributor.authorKim, HJ-
dc.contributor.authorNoh, DY-
dc.contributor.authorJe, JH-
dc.contributor.authorHwu, Y-
dc.date.accessioned2015-06-25T03:00:14Z-
dc.date.available2015-06-25T03:00:14Z-
dc.date.created2009-02-28-
dc.date.issued1999-02-15-
dc.identifier.issn0163-1829-
dc.identifier.other2015-OAK-0000000630en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12038-
dc.description.abstractThe evolution of Fe surface morphology during heteroepitaxial growth on Si(lll) and Si(001) substrates was investigated using real-time synchrotron x-ray reflectivity measurements. The growth on the Si(lll) surface was divided into the initial stage heteroepitaxial regime, the intermediate stage crossover regime, and the final-stage homoepitaxial regime. The evolution of the surface roughness in the late stage growth was described by the dynamic scaling exponent of beta similar to 0.24 consistent with reported values. On the Si(001) surface, an interlayer was formed prior to the growth of a nonepitaxial Fe layer. The roughness evolution of the Fe/Si(001) was described by beta similar to 0.36. [S0163-1829(99)04607-X].-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEvolution of surface morphology during Fe/Si(111) and Fe/Si(001) heteroepitaxy-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1103/PhysRevB.59.4650-
dc.author.googleKIM, HJen_US
dc.author.googleNOH, DYen_US
dc.author.googleHWU, Yen_US
dc.author.googleJE, JHen_US
dc.relation.volume59en_US
dc.relation.issue7en_US
dc.relation.startpage4650en_US
dc.relation.lastpage4653en_US
dc.contributor.id10123980en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.59, no.7, pp.4650 - 4653-
dc.identifier.wosid000078778800029-
dc.date.tcdate2019-01-01-
dc.citation.endPage4653-
dc.citation.number7-
dc.citation.startPage4650-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume59-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0000677361-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc21-
dc.type.docTypeArticle-
dc.subject.keywordPlusEPITAXIAL-GROWTH FRONT-
dc.subject.keywordPlusX-RAY-
dc.subject.keywordPlusLAYER-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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