DC Field | Value | Language |
---|---|---|
dc.contributor.author | KO, Hyungmin | - |
dc.contributor.author | YANG, SEOKJOO | - |
dc.contributor.author | JEUNG, JINPYEO | - |
dc.contributor.author | Park, Hyuk | - |
dc.contributor.author | SEO TAEWON | - |
dc.contributor.author | Kim, Seung‐Mo | - |
dc.contributor.author | Lee, Byoung Hun | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Chung, Yoonyoung | - |
dc.date.accessioned | 2024-02-28T04:40:55Z | - |
dc.date.available | 2024-02-28T04:40:55Z | - |
dc.date.created | 2024-02-27 | - |
dc.date.issued | 2024-02 | - |
dc.identifier.issn | 2195-1071 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/120455 | - |
dc.description.abstract | Among various photoresponsive materials, organic materials have gained interest due to their low cost, large-scale yields, and compatibility with flexible substrates. However, their low photoresponsivity compared to inorganic counterparts has been consistently pointed out as a limitation. To address this issue, a highly photoresponsive PM6:Y6/IGZO hybrid phototransistor is presented with a broad spectral range of 450–950 nm. The photoresponse of the device is enhanced by controlling the PM6:Y6 blending ratio, active layer thickness, and solvent additive treatment. The PM6:Y6 blending ratio and thickness are optimized to promote charge separation and efficient charge transport, leading to a significant increase in photoresponsivity. Moreover, solvent additives are employed to improve the crystallinity of the PM6:Y6 film, which further enhanced the charge transport. As a result, the PM6:Y6/IGZO hybrid phototransistor exhibited exceptional performance, with an ultrahigh photoresponsivity of 2.2 × 108 A W−1 and specific detectivity of 9.8 × 1016 Jones under 750 nm light with an intensity of only 1.03 nW cm−2. These results highlight the potential of organic materials in developing high-performance phototransistors. © 2024 Wiley-VCH GmbH. | - |
dc.language | English | - |
dc.publisher | John Wiley and Sons Inc. | - |
dc.relation.isPartOf | Advanced Optical Materials | - |
dc.title | IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adom.202303152 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Advanced Optical Materials | - |
dc.identifier.wosid | 001173207300001 | - |
dc.citation.title | Advanced Optical Materials | - |
dc.contributor.affiliatedAuthor | KO, Hyungmin | - |
dc.contributor.affiliatedAuthor | YANG, SEOKJOO | - |
dc.contributor.affiliatedAuthor | JEUNG, JINPYEO | - |
dc.contributor.affiliatedAuthor | Park, Hyuk | - |
dc.contributor.affiliatedAuthor | SEO TAEWON | - |
dc.contributor.affiliatedAuthor | Cho, Kilwon | - |
dc.contributor.affiliatedAuthor | Chung, Yoonyoung | - |
dc.identifier.scopusid | 2-s2.0-85185291493 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | non-fullerene acceptor | - |
dc.subject.keywordAuthor | organic bulk heterojunction | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | phototransistor | - |
dc.subject.keywordAuthor | PM6:Y6 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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